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Simulation of sputtering from an isolated conductor surrounded by a dielectric during plasma etching
Resource type
Authors/contributors
- Tarakanov, V. P. (Author)
- Shustin, E. G. (Author)
- Ronald, K. (Author)
Title
Simulation of sputtering from an isolated conductor surrounded by a dielectric during plasma etching
Abstract
We investigate the action of ion flows from a plasma onto the surface of a flat conductor lying on an insulator, with width less than the plasma Debye length. The model allows study of the processing with a steady state or pulsed potential on the microwire. The shape of pulses has been synthesized to provide the most homogeneous distribution of the etching rate over the microwire surface.
Publication
Vacuum
Volume
165
Pages
262-265
Date
2019-07-01
Journal Abbr
Vacuum
ISSN
0042-207X
Accessed
8/29/24, 10:22 AM
Library Catalog
ScienceDirect
Extra
6 citations (Crossref/DOI) [2024-10-03]
6 citations (Crossref/DOI) [2024-10-02]
Citation
Tarakanov, V. P., Shustin, E. G., & Ronald, K. (2019). Simulation of sputtering from an isolated conductor surrounded by a dielectric during plasma etching. Vacuum, 165, 262–265. https://doi.org/10.1016/j.vacuum.2019.04.021
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